收藏本站
SQJ844EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω ) at V GS = 10 V
R DS(on) ( Ω ) at V GS = 4.5 V
I D (A) per leg
Configuration
30
0.024
0.037
8
Dual
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified d
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
5m
3m
6.1
PowerPAK ? SO-8L Dual
m
D
2
D
1
5.1
m
G 1
D 1
G 2
D 2
4
G 2
S 2
3
2
G 1
1
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
S 1
Bottom View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ844EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
30
± 20
UNIT
V
Continuous Drain Current a
T C = 25 °C
T C = 125 °C
I D
8
8
Continuous Source Current (Diode
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Conduction) a
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I S
I DM
I AS
E AS
P D
8
32
22
24.2
48
16
A
mJ
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
T J , T stg
- 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
R thJA
R thJC
85
3.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2288-Rev. C, 28-Nov-11
1
Document Number: 65530
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SQJ941EP-T1-GE3 MOSFET DUAL P-CH 30V PPAK 8SOIC
SQJ964EP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SQJ970EP-T1-GE3 MOSFET DUAL N-CH 40V PPAK 8SOIC
SQM110N04-02L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N04-03L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N06-04L-GE3 MOSFET N-CH D-S 60V TO263
SQM40N10-30-GE3 MOSFET N-CH D-S 100V TO263
SQM85N03-06P-GE3 MOSFET N-CH D-S 30V TO263
相关代理商/技术参数
SQJ848AEP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 40 V (D-S) 175 ?°C MOSFET
SQJ848AEP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH D-S 40V PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:N-CHANNEL 40-V (D-S) 175C MOSFET PPAK SO8L
SQJ848EP-T1-GE3 功能描述:MOSFET 40V 30A 68W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ850EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQJ850EP-T1-GE3 功能描述:MOSFET 60V 24A 45W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ858AEP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 58A 8-SO 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 58A PPAKSO 制造商:Vishay Intertechnologies 功能描述:N-CHANNEL 40-V (D-S) 175C MOSFET PPAK SO8L
SQJ886EP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 60A SO-8 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 40V 60A PPAKSO 制造商:Vishay Intertechnologies 功能描述:N-CHANNEL 40-V (D-S) 175C MOSFET PPAK SO8L
SQJ912AEP-T1-GE3 制造商:Vishay Semiconductors 功能描述:AUTOMOTIVE DUAL N-CHANNEL 40 V (D-S) 175 C MOSFET - Tape and Reel